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Auteur H. Hasegawa |
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Titre : INP-based materials and devices : physics and technology Type de document : Monographie Auteurs : O. Wada, Éditeur scientifique ; H. Hasegawa, Éditeur scientifique Editeur : New York, Londres, Hoboken (New Jersey), ... : John Wiley & Sons Année de publication : 1999 Collection : Wiley Series in Microwave and Optical Engineering Importance : 592 p. Format : 16 x 24 cm ISBN/ISSN/EAN : 978-0-471-18191-0 Note générale : Bibliographie Langues : Anglais (eng) Descripteur : [Vedettes matières IGN] Physique
[Termes IGN] électronique
[Termes IGN] instrument électronique
[Termes IGN] laser
[Termes IGN] photodiode
[Termes IGN] semi-conducteur
[Termes IGN] transistorRésumé : (Editeur) Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include:
* Basic materials physics involved in a wide range of InP-based compounds.
* Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE.
* Hetero-interface control and dry process techniques for device fabrication.
* High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications.
* Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks.
* Optoelectronic integration and packing for functional, low-cost modules.Note de contenu : - Demand for InP-Based Optoelectronic Devices and Systems (J. Yoshida).
- Applications of InP-Based Transistors for Microwave and Millimeter- Wave Systems (M. Matloubian).
- Material Physics of InP-Based Compound Semiconductors (Y. Takeda).
- InP Bulk Crystal Growth and Characterization (D. Bliss).
- Metal-Organic Chemical Vapor Deposition of InP-Based Materials (T. Fukui).
- InP and Related Compound Growth Based on MBE Technologies with Gaseous Sources (H. Heinecke).
- Physics and Technological Control of Surfaces and Interfaces of InP-Based Materials (H. Hasegawa).
- Dry Process Technique for InP-Based Materials (K. Asakawa).
- Heterostructure Field Effect Transistors and Circuit Applications (J. Dickmann).
- Heterojunction Bipolar Transistors and Circuit Applications (H.-F. Chau & W. Liu).
- Lasers, Amplifiers, and Modulators Based on InP-Based Materials (N. Dutta).
- Photodiodes and Receivers Based on InP Materials (K. Taguchi).
- Hybrid Integration and Packaging of InP-Based Optoelectronic Devices (W. Hunziker).
- IndexNuméro de notice : 69588 Affiliation des auteurs : non IGN Nature : Recueil / ouvrage collectif Permalink : https://documentation.ensg.eu/index.php?lvl=notice_display&id=44838 Exemplaires(1)
Code-barres Cote Support Localisation Section Disponibilité 69588-01 24.14 Livre Centre de documentation En réserve M-103 Disponible
